symbol maximum units parameter absolute maximum ratings t c =25c unless otherwise noted aod4185/AOI4185 p-channel enhancement mode field effect transistor features v ds (v) = -40v i d = -40a (v gs = -10v) r ds(on) < 15m w (v gs = -10v) r ds(on) < 20m w (v gs = -4.5v) 100% uis tested! 100% rg tested! general description the aod4185/AOI4185 uses advanced trench technology to provide excellent r ds(on) and low gate charge. with the excellent thermal resistance of the dpak/ipak package, this device is well suited for high current applications. -rohs compliant -halogen free* g ds g to-251a ipak top view s bottom view d s g d d d to252 dpak top view bottom view g s d g s d symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 15 20 41 50 r q jc 2 2.4 c/w thermal characteristics parameter units maximum junction-to-ambient a,g t 10s r q ja c/w steady-state t a =25c p dsm t c =25c maximum junction-to-ambient a,g steady-state power dissipation a junction and storage temperature range maximum junction-to-case d,f t c =100c p d -115 -42 88 c/w drain-source voltage v 20 gate-source voltage t a =70c power dissipation b avalanche current c repetitive avalanche energy l=0.1mh c a mj i d pulsed drain current c -40 -31 continuous drain current b,h maximum units parameter t c =25c t c =100c -40 v c 62.5 31 -55 to 175 w 2.5 1.6 alpha & omega semiconductor, ltd. www.aosmd.com
aod4185/AOI4185 symbol min typ max units bv dss -40 v -1 t j =55c -5 i gss 100 na v gs(th) -1.7 -1.9 -3 v i d(on) -115 a 12.5 15 t j =125c 19 23 16 20 g fs 50 s v sd -0.72 -1 v i s -20 a c iss 2550 pf c oss 280 pf c rss 190 pf r g 2.5 4 6 w q g (-10v) 42 55 nc q g (-4.5v) 18.6 q gs 7 nc q gd 8.6 nc t d(on) 9.4 ns r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current gate threshold voltage v ds =v gs i d =-250 m a on state drain current v gs =-10v, v ds =-5v v gs =-10v, i d =-20a reverse transfer capacitance output capacitance dynamic parameters i dss m a drain-source breakdown voltage i d =-250 m a, v gs =0v v ds =-40v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions m w gate drain charge v gs =0v, v ds =-20v, f=1mhz switching parameters total gate charge v gs =-4.5v, i d =-15a i s =-1a,v gs =0v v ds =-5v, i d =-20a turn-on delaytime maximum body-diode continuous current input capacitance gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-10v, v ds =-20v, i d =-20a total gate charge alpha & omega semiconductor, ltd. www.aosmd.com t d(on) 9.4 ns t r 20 ns t d(off) 55 ns t f 30 ns t rr 38 49 ns q rr 47 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =-20a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-10v, v ds =-20v, r l =1 w , r gen =3 w turn-off fall time turn-on delaytime tbd tbd body diode reverse recovery charge i f =-20a, di/dt=100a/ m s a: the value of r ja is measured with the device in a still air environm ent with t a =25 c. the power dissipation p dsm and current rating i dsm are based on t j(max) =150 c, using steady state junction-to-ambient thermal r esistance. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c: repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. d. the r ja is the sum of the thermal impedence from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. h. the maximum current rating is limited by bond-w ires. *this device is guaranteed green after data code 8x 11 (sep 1 st 2008). rev4: april, 2012 alpha & omega semiconductor, ltd. www.aosmd.com
aod4185/AOI4185 typical electrical and thermal characteristics 0 20 40 60 80 100 120 0 1 2 3 4 5 -i d (a) -v ds (volts) figure 1: on-region characteristics v gs =-3.5v -4.0v -10v - 6.0v -4.5v ` 0 20 40 60 80 100 1.5 2 2.5 3 3.5 4 4.5 5 -i d (a) -v gs (volts) figure 2: transfer characteristics 10 12 14 16 18 20 22 24 0 10 20 30 40 50 60 r ds(on) (m w ww w ) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 175 200 normalized on-resistance v gs =-10v i d =-20a v gs =-4.5v i d =-15a v ds =-5v v gs =-4.5v v gs =-10v 25 125 c alpha & omega semiconductor, ltd. www.aosmd.com 150 mj 10 0 10 20 30 40 50 60 -i d (a) figure 3: on-resistance vs. drain current and gate voltage 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.6 -50 -25 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature 10 15 20 25 30 35 40 45 3 4 5 6 7 8 9 10 r ds(on) (m w ww w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =-20a 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
aod4185/AOI4185 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 35 40 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 power (w) c oss c rss 0.1 1 10 100 1000 0.1 1 10 100 -i d (amps) 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 10 m s 100 m s v ds =-20v i d =-20a t j(max) =175 c alpha & omega semiconductor, ltd. www.aosmd.com 150 mj 10 0.00001 0.0001 0.001 0.01 0.1 1 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) 0.1 0.1 1 10 100 -v ds (volts) figure 9: maximum forward biased safe operating area (note f) j(max) t c =25 c single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.4 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd. www.aosmd.com
aod4185/AOI4185 typical electrical and thermal characteristics 0 10 20 30 40 50 0 25 50 75 100 125 150 175 -current rating i d (a) t case ( c) figure 13: current de-rating (note b) 1 10 100 1000 10000 power (w) t j(max) =150 c 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 12: power de-rating (note b) alpha & omega semiconductor, ltd. www.aosmd.com 150 1 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal impe dance (note g) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =50 c/w single pulse t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse alpha & omega semiconductor, ltd. www.aosmd.com
aod4185/AOI4185 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v unclamped inductive switching (uis) test circuit & waveforms vds l 2 e = 1/2 li ar ar vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) alpha & omega semiconductor, ltd. www.aosmd.com vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i alpha & omega semiconductor, ltd. www.aosmd.com
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